Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications

被引：17
|
作者：
Hsu, Sheng-Yao [1 ]
Chen, Hsiao-Yu [1 ]
Chen, Kuan-Neng [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 07期
关键词：
Adhesion layer; metal bonding; 3-D integration; PERFORMANCE;
D O I：
10.1109/LED.2012.2194769
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel 3-D bonding technology with cosputtered copper and titanium as bonding material is proposed and investigated based on the diffusion mechanism of cosputtered metal during bonding. This technology features a self-formed adhesion layer for Cu metal layers and interconnects. In addition, cosputtered Cu/Ti bonding exhibits good electrical performance as well as high resistance to multiple current stressing. With the advantages of fabrication efficiency and reliable bond quality, cosputtered Cu/Ti bonding technology presents the potential to be applied in 3-D integration.
引用
收藏
页码：1048 / 1050
页数：3
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