Polariton-generated intensity squeezing in semiconductor micropillars

被引:80
作者
Boulier, T. [1 ]
Bamba, M. [2 ]
Amo, A. [1 ,3 ]
Adrados, C. [1 ]
Lemaitre, A. [3 ]
Galopin, E. [3 ]
Sagnes, I. [3 ]
Bloch, J. [3 ]
Ciuti, C. [4 ]
Giacobino, E. [1 ]
Bramati, A. [1 ]
机构
[1] Univ Paris 06, Ecole Normale Super, Lab Kastler Brossel, F-75252 Paris 05, France
[2] Osaka Univ, Dept Phys, Toyonaka, Osaka 5600043, Japan
[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[4] Univ Paris Diderot, Lab Mat & Phenomenes Quant, F-75205 Paris 13, France
关键词
D O I
10.1038/ncomms4260
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The generation of squeezed and entangled light fields is a crucial ingredient for the implementation of quantum information protocols. In this context, semiconductor materials offer a strong potential for the implementation of on-chip devices operating at the quantum level. Here we demonstrate a novel source of continuous variable squeezed light in pillar-shaped semiconductor microcavities in the strong coupling regime. Degenerate polariton four-wave mixing is obtained by exciting the pillar at normal incidence. We observe a bistable behaviour and we demonstrate the generation of squeezing near the turning point of the bistability curve. The confined pillar geometry allows for a larger amount of squeezing than planar microcavities due to the discrete energy levels protected from excess noise. By analysing the noise of the emitted light, we obtain a measured intensity squeezing of 20.3%, inferred to be 35.8% after corrections.
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页数:7
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