FET on hydrogenated diamond surface

被引：5

作者：

Gulyaev, Yu. V. ^{[1
]}

Mityagin, A. Yu.

Chucheva, G. V. ^{[1
]}

Afanas'ev, M. S. ^{[1
]}

Zyablyuk, K. N. ^{[1
]}

Talipov, N. Kh. ^{[1
]}

Nedosekin, P. G. ^{[2
]}

Nabiev, A. E. ^{[3
]}

机构：

[1] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Fryazino Branch, Fryazino 141196, Moscow Oblast, Russia

[2] Ind Technol Ctr UralAlmazInvest, Moscow 121108, Russia

[3] Azerbaijan State Pedag Univ, Baku 370000, Azerbaijan

来源：

JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2014年 / 59卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

TERMINATED DIAMOND; DOPED DIAMOND; TRANSISTORS; CONTACT; GHZ;

D O I：

10.1134/S1064226914030061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is demonstrated that a FET can be created on a hydrogenated diamond surface. A technology for production and properties of conducting hydrogenated diamond surface are considered. The technology is used to create a FET on the hydrogenated (110) surface of the 2A natural diamond.

引用

页码：282 / 287

页数：6

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