Room temperature ferromagnetism in transition metal-doped black phosphorous

被引：13

作者：

Jiang, Xiaohong ^{[1
]}

Zhang, Xinwei ^{[1
]}

Xiong, Fang ^{[1
]}

Hua, Zhenghe ^{[1
]}

Wang, Zhihe ^{[1
]}

Yang, Shaoguang ^{[1
]}

机构：

[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 19期

基金：

中国国家自然科学基金;

关键词：

DILUTED MAGNETIC SEMICONDUCTOR; FIELD-EFFECT TRANSISTORS; OPTICAL-PROPERTIES; FILMS; RISE;

D O I：

10.1063/1.5022540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High pressure high temperature synthesis of transition metal (TM = V, Cr, Mn, Fe, Co, Ni, and Cu) doped black phosphorus (BP) was performed. Room temperature ferromagnetism was observed in Cr and Mn doped BP samples. X-ray diffraction and Raman measurements revealed pure phase BP without any impurity. Transport measurements showed us semiconducting character in 5 at. % doped BP samples Cr5%P95% and Mn5%P95%. The magnetoresistance (MR) studies presented positive MR in the relatively high temperature range and negative MR in the low temperature range. Compared to that of pure BP, the maximum MR was enhanced in Cr5%P95%. However, paramagnetism was observed in V, Fe, Co, Ni, and Cu doped BP samples. Published by AIP Publishing.

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页数：4

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