Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

被引：9

作者：

Fleury, Clement ^{[1
]}

Zhytnytska, Rimma ^{[2
]}

Bychikhin, Sergey ^{[1
]}

Cappriotti, Mattia ^{[1
]}

Hilt, Oliver ^{[2
]}

Visalli, Domenica ^{[3
]}

Meneghesso, Gaudenzio ^{[4
]}

Zanoni, Enrico ^{[4
]}

Wuerfl, Joachim ^{[2
]}

Derluyn, Joff ^{[3
]}

Strasser, Gottfried ^{[1
]}

Pogany, Dionyz ^{[1
]}

机构：

[1] Vienna Univ Technol, A-1040 Vienna, Austria

[2] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst, D-12489 Berlin, Germany

[3] EpiGaN, B-3500 Hasselt, Belgium

[4] Univ Padua, I-35131 Padua, Italy

来源：

MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 9-11期

关键词：

RELIABILITY; DEGRADATION; VOLTAGE;

D O I：

10.1016/j.microrel.2013.07.117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We analyse vertical breakdown signatures in normally-off and normally-on AlGaN/GaN HEMTs on Si and SiC substrate for power applications. The probability distribution function of the breakdown voltage V-BD values shows mostly a bimodal distribution that is characteristic for substrate/epitaxy type and bias polarity. Different types of distribution functions are tested. The vertical breakdown is found to be a time dependent phenomenon and hypotheses for its initiation are discussed. Using backside infrared microscopy, we found that the breakdown occurs in localized spots, related to current filaments. Failure localisation under pulsed mode shows better spatial localisation compared to the DC conditions. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1444 / 1449

页数：6

共 26 条

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