Study of Latent Damage in Power MOSFETs Caused by Heavy Ion Irradiation

被引：24

作者：

Ikeda, Naomi ^{[1
]}

Kuboyama, Satoshi ^{[1
]}

Satoh, Yohei ^{[1
]}

Tamura, Takashi ^{[1
]}

机构：

[1] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期

关键词：

Heavy ion; latent damage; power MOSFET;

D O I：

10.1109/TNS.2008.2007902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The latent damages were investigated for Power MOSFETs irradiated by high LET heavy ions. It was demonstrated that the post irradiation leakage current in damaged gate oxide was determined by the initial gate stress after the irradiation and the damage was stable even after a million of gate stress repetition.

引用

页码：3388 / 3393

页数：6

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