Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

被引：48

作者：

Han, Wei ^{[1
]}

Jiang, Xin ^{[1
]}

Kajdos, Adam

Yang, See-Hun ^{[1
]}

Stemmer, Susanne

Parkin, Stuart S. P. ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

NATURE COMMUNICATIONS | 2013年 / 4卷

关键词：

ELECTRON-GAS; SILICON; SUPERCONDUCTIVITY; ACCUMULATION; COEXISTENCE; INTERFACE; MOBILITY; CREATION;

D O I：

10.1038/ncomms3134

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

There has been much interest in the injection and detection of spin-polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate single crystals and La-doped strontium titanate epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to similar to 100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the strontium titanate has a strong temperature dependence. This behaviour and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/strontium titanate interfaces, perhaps related to the formation of doping induced Ti3+. Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material.

引用

页数：6

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