Photoreflectance characteristic about AlGaAs/GaAs heterostructure

被引：0

作者：

Yu, JI ^{[1
]}

Yun, JG ^{[1
]}

Kim, DL ^{[1
]}

Bae, IH ^{[1
]}

机构：

[1] Yeungnam Univ, Dept Phys, Kyongsan 712749, South Korea

来源：

SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY | 2006年 / 64卷 / 01期

关键词：

photoreflectance; AlGaAs/GaAs; etching;

D O I：

10.1016/j.saa.2005.06.037

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

We investigated the photoreflectance (PR) spectra of as-grown, etched AlGaAs/GaAs heterostructure sample. As etching time increases, the electric fields are reduced. And the surface and interface electric field calculated for the AlGaAs/GaAs sample, respectively. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：54 / 56

页数：3

共 6 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].