Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

被引：22

作者：

Pinero, J. C. ^{[1
]}

Araujo, D. ^{[1
]}

Fiori, A. ^{[3
]}

Traore, A. ^{[2
]}

Villar, M. P. ^{[1
]}

Eon, D. ^{[2
]}

Muret, P. ^{[2
]}

Pernot, J. ^{[2
]}

Teraji, T. ^{[3
]}

机构：

[1] Univ Cadiz, Dept Ciencias Mat, Cadiz 11510, Spain

[2] CNRS UJF, Inst Neel, Ave Martyrs, F-38042 Grenoble, France

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki, Japan

来源：

APPLIED SURFACE SCIENCE | 2017年 / 395卷

基金：

欧盟地平线“2020”;

关键词：

Diamond; Schottky; Oxygen-terminated; TEM; Power devices; TUNGSTEN CARBIDE; STABILITY;

D O I：

10.1016/j.apsusc.2016.04.166

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared and used for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky barrier heights and ideality factors of both structures are shown to be related with the modification of the oxygen-terminated diamond/metal interface configuration. Oxide formation, oxide thickness variations and interfacial oxygen redistribution, associated with thermal treatment are demonstrated. Ideality factors close to ideality (n(WC) = 1.02 and n(Zr) = 1.16) are obtained after thermal treatment and are shown to be related with the relative oxygen content at the surface (OCRWC = 3.03 and OCRZr = 1.5). Indeed, thermal treatment at higher temperatures is shown to promote an escape of oxygen for the case of the WC diode, while it generates a sharper accumulation of oxygen at the metal/diamond interface for the case of Zr diode. Therefore, the metal-oxygen affinity is shown to be a key parameter to improve diamond-based Schottky diodes. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：200 / 207

页数：8

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