Temperature sensitivity of injection-locked vertical-cavity surface-emitting lasers

被引:11
作者
Chlouverakis, KE [1 ]
Adams, MJ [1 ]
机构
[1] Univ Essex, Dept Elect Syst Engn, Colchester CO4 3SQ, Essex, England
基金
英国工程与自然科学研究理事会;
关键词
injection locking; linewidth enhancement factor; stability maps; temperature dependence; vertical-cavity surface-emitting lasers (VCSELs);
D O I
10.1109/JQE.2003.823018
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dynamics of injection-locked vertical-cavity surface-emitting lasers (VCSELs) are studied as a function of temperature. The temperature dependence of the slave VCSEL's parameters is used in a rate-equation analysis and parametric maps in the injection strength K- and frequency detuning omega-planes are calculated in order to investigate the temperature dependence of the system's stability. We demonstrate that, as we increase temperature for the range where the linewidth enhancement factor alpha starts to stabilize, approximately 10 K above the temperature of where the minimum of the threshold carrier density occurs, the locking region tends to be suppressed and the nonlinearities to grow due to the increase of the relaxation resonance frequency omega(R) and the total loss rate Gamma(0). Below that range, the opposite route is followed due to the enhanced value of the linewidth enhancement factor alpha and the results are sensitive to the intraband relaxation time tau It is finally concluded that, to take advantage of the stable locking region and to avoid the nonlinearities, it is better for the VCSEL device to have a minimum carrier density of 40 K-50 K below room temperature, thus allowing a good operating tolerance in the range +/-20 K around room temperature.
引用
收藏
页码:189 / 196
页数:8
相关论文
共 29 条
  • [11] PULSED ELECTRICAL OPERATION OF 1.5-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS
    FISHER, MA
    HUANG, YZ
    DANN, AJ
    ELTON, DJ
    HARLOW, MJ
    PERRIN, SD
    REED, J
    REID, I
    ADAMS, MJ
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (06) : 608 - 610
  • [12] Quantum noise in VCSELs
    Hermier, JP
    Maurin, I
    Giacobino, E
    Schnitzer, P
    Michalzik, R
    Ebeling, KJ
    Bramati, A
    Khoury, AZ
    [J]. NEW JOURNAL OF PHYSICS, 2000, 2 : 261 - 2613
  • [13] Polarisation-resolved chaos and instabilities in a vertical cavity surface emitting laser subject to optical injection
    Hong, Y
    Spencer, PS
    Bandyopadhyay, S
    Rees, P
    Shore, KA
    [J]. OPTICS COMMUNICATIONS, 2003, 216 (1-3) : 185 - 189
  • [14] Dynamical characteristics of an optically injected semiconductor laser
    Hwang, SK
    Liu, JM
    [J]. OPTICS COMMUNICATIONS, 2000, 183 (1-4) : 195 - 205
  • [15] IWASHITA K, 1982, IEEE J QUANTUM ELECT, V18, P1669, DOI 10.1109/TMTT.1982.1131305
  • [16] Routes to chaos in an optically injected semiconductor laser
    Krauskopf, B
    Wieczorek, S
    Lenstra, D
    [J]. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 : 612 - 619
  • [17] Effects of transverse-mode competition on the injection dynamics of vertical-cavity surface-emitting lasers
    Law, JY
    vanTartwijk, GHM
    Agrawal, GP
    [J]. QUANTUM AND SEMICLASSICAL OPTICS, 1997, 9 (05): : 737 - 747
  • [18] Analytical formulas for the optical gain of quantum wells
    Makino, T
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (03) : 493 - 501
  • [19] Temperature dependence of the spontaneous emission factor in VCSELs
    Masum, J
    Ramoo, D
    Balkan, N
    Adams, MJ
    [J]. IEE PROCEEDINGS-OPTOELECTRONICS, 1999, 146 (06): : 245 - 251
  • [20] Morgan A, 1984, BIOL EFFECTS MAN MAD, V2, P1