Temperature sensitivity of injection-locked vertical-cavity surface-emitting lasers

被引:11
作者
Chlouverakis, KE [1 ]
Adams, MJ [1 ]
机构
[1] Univ Essex, Dept Elect Syst Engn, Colchester CO4 3SQ, Essex, England
基金
英国工程与自然科学研究理事会;
关键词
injection locking; linewidth enhancement factor; stability maps; temperature dependence; vertical-cavity surface-emitting lasers (VCSELs);
D O I
10.1109/JQE.2003.823018
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dynamics of injection-locked vertical-cavity surface-emitting lasers (VCSELs) are studied as a function of temperature. The temperature dependence of the slave VCSEL's parameters is used in a rate-equation analysis and parametric maps in the injection strength K- and frequency detuning omega-planes are calculated in order to investigate the temperature dependence of the system's stability. We demonstrate that, as we increase temperature for the range where the linewidth enhancement factor alpha starts to stabilize, approximately 10 K above the temperature of where the minimum of the threshold carrier density occurs, the locking region tends to be suppressed and the nonlinearities to grow due to the increase of the relaxation resonance frequency omega(R) and the total loss rate Gamma(0). Below that range, the opposite route is followed due to the enhanced value of the linewidth enhancement factor alpha and the results are sensitive to the intraband relaxation time tau It is finally concluded that, to take advantage of the stable locking region and to avoid the nonlinearities, it is better for the VCSEL device to have a minimum carrier density of 40 K-50 K below room temperature, thus allowing a good operating tolerance in the range +/-20 K around room temperature.
引用
收藏
页码:189 / 196
页数:8
相关论文
共 29 条
  • [1] Synchronization of chaotic injected-laser systems and its application to optical cryptography
    AnnovazziLodi, V
    Donati, S
    Scire, A
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (06) : 953 - 959
  • [2] Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3-μm InGaAsP-InP multiple-quantum-well lasers
    Belenky, G
    Reynolds, CL
    Shterengas, L
    Hybertsen, MS
    Donetsky, DV
    Shtengel, GE
    Luryi, S
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (08) : 969 - 971
  • [3] Study of long-wavelength VCSEL-VCSEL injection locking for 2.5-Gb/s transmission
    Chang, CH
    Chrostowski, L
    Chang-Hasnain, CJ
    Chow, WW
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (11) : 1635 - 1637
  • [4] Amplified spontaneous emission spectroscopy in strained quantum-well lasers
    Chang, CS
    Chuang, SL
    Minch, JR
    Fang, WCW
    Chen, YK
    TanbunEk, T
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (04) : 1100 - 1107
  • [5] Open-loop chaotic synchronization of injection-locked semiconductor lasers with gigahertz range modulation
    Chen, HF
    Liu, JM
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (01) : 27 - 34
  • [6] Determining laser linewidth parameter from Hopf bifurcation minimum in lasers subject to optical injection
    Chlouverakis, KE
    Al-Aswad, KM
    Henning, ID
    Adams, MJ
    [J]. ELECTRONICS LETTERS, 2003, 39 (16) : 1185 - 1187
  • [7] Stability maps of injection-locked laser diodes using the largest Lyapunov exponent
    Chlouverakis, KE
    Adams, MJ
    [J]. OPTICS COMMUNICATIONS, 2003, 216 (4-6) : 405 - 412
  • [8] Enhancement of dynamic range in 1.55-μm VCSELs using injection locking
    Chrostowski, L
    Chang, CH
    Chang-Hasnain, CJ
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (04) : 498 - 500
  • [9] CHROSTOWSKI L, 2003, OFC MAR, V2, P753
  • [10] Gain modeling of strained InGaAsP based MQW optical amplifiers
    Debaisieux, G
    Guemmouri, M
    Chelles, S
    Ougazzaden, A
    HerveGruyer, G
    Filoche, M
    Marzin, JY
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (11) : 1475 - 1477