Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN

被引：3

作者：

Li Xiao-Jing ^{[1
]}

Zhao De-Gang ^{[1
]}

He Xiao-Guang ^{[1
]}

Wu Liang-Liang ^{[1
]}

Li Liang ^{[1
]}

Yang Jing ^{[1
]}

Le Ling-Cong ^{[1
]}

Chen Ping ^{[1
]}

Liu Zong-Shun ^{[1
]}

Jiang De-Sheng ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

ACTA PHYSICA SINICA | 2013年 / 62卷 / 20期

基金：

中国国家自然科学基金;

关键词：

p-GaN; Ohmic contact; circular transmission line model; rapid thermal annealing; AU CONTACTS;

D O I：

10.7498/aps.62.206801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper, we investigate the effect of annealing conditions on the characteristic of Ni/Au Ohmic contact to p-GaN. The specific contact resistivities under different annealing temperature and different annealing atmosphere are tested using the circular transmission line model. It is found that the best annealing temperature is about 500 C. The annealing atmosphere of nitrogen-oxygen gas mixture can lead to lower specific contact resistivity than that of pure nitrogen, and the specific contact resistivity has no relationship with the content of oxygen. Finally, we obtain the lowest specific contact resistivity to be 7.65 x 10(-4) Omega.cm(2) at the best annealing temperature and atmosphere.

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页数：5

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