ECORCE: A TCAD Tool for Total Ionizing Dose and Single Event Effect Modeling

被引:20
作者
Michez, A. [1 ]
Dhombres, S. [1 ]
Boch, J. [1 ]
机构
[1] Univ Montpellier, IES, CNRS 5214, UMR UM2, F-34095 Montpellier 5, France
关键词
Dynamic mesh; electronic device modeling; single event effect; TCAD software; total ionizing dose; trapping in oxides; INDUCED CHARGE NEUTRALIZATION; INTERFACE-TRAP FORMATION; TEMPERATURE-DEPENDENCE; AUGER RECOMBINATION; RADIATION; MECHANISMS; HYDROGEN; OXIDES;
D O I
10.1109/TNS.2015.2449281
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
TCAD software for device modeling, called ECORCE, is presented. ECORCE is based on a classical drift-diffusion model and is distributed under the GPL. It facilitates TCAD modeling by providing an easy-to-use graphical user interface for defining the geometry and physical model of the devices, executing calculations, and analyzing results. Furthermore, by integrating a dynamic mesh generator, ECORCE frees the user from the meshing step for either DC or transient analysis. ECORCE allows Single Event Effect modeling and features a restricted diffusion add-on that accounts for the kinetics of the trapping-detrapping process in insulators. This paper demonstrates that ECORCE models the Single Event Effect and Total Ionizing Dose response of MOS devices. Experimental results are modeled quantitatively.
引用
收藏
页码:1516 / 1527
页数:12
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