AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents

被引：39
|
作者：
White, Thomas P. [1 ]
Shetty, Satish [1 ]
Ware, Morgan E. [1 ]
Mantooth, H. Alan [2 ]
Salamo, Gregory J. [1 ]
机构：
[1] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA
[2] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
来源：
IEEE SENSORS JOURNAL | 2018年 / 18卷 / 07期
基金：
美国国家科学基金会;
关键词：
Hall effect; gallium nitride; AlGaN/GaN; HEMT; current sensor; temperature sensor; offset voltage; 2-DIMENSIONAL ELECTRON-GAS; OFFSET REDUCTION; MOBILITY; HETEROSTRUCTURES; SENSORS;
D O I：
10.1109/JSEN.2018.2794264
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN/Al0.20Ga0.80N/GaN heterostructures were grown by molecular beam epitaxy and fabricated into micro-Hall effect sensors for the purpose of simultaneous current and temperature detection. The devices were characterized over a temperature range of - 183 degrees C to 252 degrees C and were determined to be linearly dependent on magnetic field and temperature throughout. The high room temperature mobility of 2000 cm(2)/Vs allowed for a very high magnetic field sensitivity of 113 VA(-1)T(-1), which only decreased to 80 VA(-1)T(-1) at 252 degrees C. The ability to measure temperature while at the same time measure the magnitude of the B-field, and thus current in a nearby line is demonstrated. A method of decoupling temperature and current signatures is also shown together with a simple method of offset voltage understanding and removal.
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页码：2944 / 2951
页数：8
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