AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents

被引：39

作者：

White, Thomas P. ^{[1
]}

Shetty, Satish ^{[1
]}

Ware, Morgan E. ^{[1
]}

Mantooth, H. Alan ^{[2
]}

Salamo, Gregory J. ^{[1
]}

机构：

[1] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA

[2] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

来源：

IEEE SENSORS JOURNAL | 2018年 / 18卷 / 07期

基金：

美国国家科学基金会;

关键词：

Hall effect; gallium nitride; AlGaN/GaN; HEMT; current sensor; temperature sensor; offset voltage; 2-DIMENSIONAL ELECTRON-GAS; OFFSET REDUCTION; MOBILITY; HETEROSTRUCTURES; SENSORS;

D O I：

10.1109/JSEN.2018.2794264

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN/Al0.20Ga0.80N/GaN heterostructures were grown by molecular beam epitaxy and fabricated into micro-Hall effect sensors for the purpose of simultaneous current and temperature detection. The devices were characterized over a temperature range of - 183 degrees C to 252 degrees C and were determined to be linearly dependent on magnetic field and temperature throughout. The high room temperature mobility of 2000 cm(2)/Vs allowed for a very high magnetic field sensitivity of 113 VA(-1)T(-1), which only decreased to 80 VA(-1)T(-1) at 252 degrees C. The ability to measure temperature while at the same time measure the magnitude of the B-field, and thus current in a nearby line is demonstrated. A method of decoupling temperature and current signatures is also shown together with a simple method of offset voltage understanding and removal.

引用

页码：2944 / 2951

页数：8

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