Electronic, optical, and surface properties of PtSi thin films

被引：30

作者：

Bentmann, H. ^{[1
]}

Demkov, Alexander A. ^{[1
]}

Gregory, R. ^{[2
]}

Zollner, S. ^{[3
]}

机构：

[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[2] Freescale Semicond Inc, Tempe, AZ 85284 USA

[3] Freescale Semicond Inc, Hopewell Jct, NY 12533 USA

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.78.205302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a theoretical and experimental study of thin Pt silicide films. Employing density-functional theory, we investigate the electronic structure, bonding, and optical properties of PtSi and Pt2Si. Additionally, we calculate surface energies for various orientations and terminations of PtSi surfaces. Our results suggest that thermodynamics may play a role in the silicide formation. The complex dielectric function determined by spectroscopic ellipsometry exhibits non-Drude behavior and shows peaks, which are identified with interband transitions in the 5d manifold of platinum and compared with theory.

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页数：9

相关论文

共 31 条

[1] PHOTOELECTRIC WORK FUNCTION MEASUREMENTS ON NICKEL CRYSTALS AND FILMS [J].

BAKER, BG ;

JOHNSON, BB ;

MAIRE, GLC .

SURFACE SCIENCE, 1971, 24 (02) :572-&

[2] First-principles elastic constants and electronic structure of α-Pt2Si and PtSi -: art. no. 134112 [J].

Beckstein, O ;

Klepeis, JE ;

Hart, GLW ;

Pankratov, O .

PHYSICAL REVIEW B, 2001, 63 (13)

[3] PROJECTOR AUGMENTED-WAVE METHOD [J].

BLOCHL, PE .

PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979

[4] CURRENT TRANSPORT MECHANISMS STUDIED BY I-V-T AND IR PHOTOEMISSION MEASUREMENTS ON A P-DOPED PTSI SCHOTTKY DIODE [J].

CHIN, VWL ;

GREEN, MA ;

STOREY, JWV .

SOLID-STATE ELECTRONICS, 1993, 36 (08) :1107-1116

[5] Influence of Pt addition on the texture of NiSi on Si(001) [J].

Detavernier, C ;

Lavoie, C .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3549-3551

[6] An off-normal fibre-like texture in thin films on single-crystal substrates [J].

Detavernier, C ;

Özcan, AS ;

Jordan-Sweet, J ;

Stach, EA ;

Tersoff, J ;

Ross, FM ;

Lavoie, C .

NATURE, 2003, 426 (6967) :641-645

[7]

DHUERLE FM, 1986, J MATER RES, V1, P205

[8] Experimental and theoretical electronic structure determination for PtSi [J].

Franco, N ;

Klepeis, JE ;

Bostedt, C ;

Van Buuren, T ;

Heske, C ;

Pankratov, O ;

Callcott, TA ;

Ederer, DL ;

Terminello, LJ .

PHYSICAL REVIEW B, 2003, 68 (04)

[9] CRYSTAL-STRUCTURE AND LINEAR THERMAL EXPANSIVITIES OF PLATINUM SILICIDE AND PLATINUM GERMANIDE [J].

GRAEBER, EJ ;

BAUGHMAN, RJ ;

MOROSIN, B .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1973, 29 (SEP15) :1991-1994

[10] NiSi salicide technology for scaled CMOS [J].

Iwai, H ;

Ohguro, T ;

Ohmi, S .

MICROELECTRONIC ENGINEERING, 2002, 60 (1-2) :157-169

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