The atomic fabrication of a silicon based quantum computer

被引:1
作者
Simmons, MY [1 ]
Schofield, SR [1 ]
O'Brien, JL [1 ]
Curson, NJ [1 ]
Clark, RG [1 ]
Buehler, TM [1 ]
McKinnon, RP [1 ]
Brenner, R [1 ]
Reilly, DJ [1 ]
Dzurak, AS [1 ]
Hamilton, AR [1 ]
机构
[1] Univ New S Wales, Sch Phys, Ctr Quantum Comp Technol, Sydney, NSW 2052, Australia
来源
PROCEEDINGS OF THE 2001 1ST IEEE CONFERENCE ON NANOTECHNOLOGY | 2001年
关键词
D O I
10.1109/NANO.2001.966469
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents recent results on two different approaches to realize a solid-state quantum computer based in silicon, using phosphorus atoms as qubits. In the first approach the device is built from the 'bottom-up using a combination of atomic lithography with a scanning tunneling microscope and high quality silicon epitaxial growth using molecular beam epitaxy. In the second approach ion implantation is used to implant the phosphorus atoms from the 'top-down'. In both cases surface control electrodes are fabricated by conventional electron beam lithography. Techniques for qubit read-out utilising coincidence measurements on twin single electron transistors are also presented.
引用
收藏
页码:471 / 476
页数:6
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