Gate tuned weak antilocalization effect in calcium doped Bi2Se3 topological insulators

被引：11

作者：

Irfan, Bushra ^{[1
]}

Joshi, Bhanu P. ^{[2
]}

Thamizhavel, A. ^{[2
]}

Deshmukh, Mandar M. ^{[2
]}

Chatterjee, Ratnamala ^{[1
]}

机构：

[1] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India

[2] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Bombay 400005, Maharashtra, India

来源：

SOLID STATE COMMUNICATIONS | 2015年 / 220卷

关键词：

Topological insulators; Bismuth selenide; Weak antilocalization effect;

D O I：

10.1016/j.ssc.2015.07.007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigate the effect of weak antilocalization arising from topological surface states in high quality single crystals of Bi1.995Ca0.005Se3, at low temperature. The weak antilocalization co-efficient of conductance can be tuned by gate voltage and separated into coherently independent channels, which in topological insulators include both the bulk conduction and topological surface conduction. By calcium doping, we are able to achieve p-type behavior in Bi1.995Ca0.005Se3 (bulk crystals of thickness similar to 0.3 mm) with carrier density similar to 10(18)/cm(3). (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：45 / 48

页数：4

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