Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells

被引：45

作者：

Kojima, Kazunobu ^{[1
]}

Kamon, Hiroaki ^{[1
]}

Funato, Mitsuru ^{[1
]}

Kawakami, Yoichi ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 | 2008年 / 5卷 / 09期

关键词：

D O I：

10.1002/pssc.200779277

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The anisotropic band structures and spontaneous emission of the non c plane InGaN/GaN quantum wells (QWs) were computed based on the k center dot p perturbation theory. Spontaneous emission due to the A valence band is strongly polarized perpendicular to the c axis, while that from the B band has 90 degrees-rotated polarization, for the crystal angle theta larger than 50 degrees. However, it was found that excited carriers can distribute into both the A and B bands, so that the effective polarization P-eff defined by the integrated luminescence intensity is much reduced even for nonpolar InGaN/GaN QWs. Thus, P-eff was systematically studied for arbitrary planes. We found that the energy separation between the A and B bands becomes significant and carrier population of the B valence band is suppressed as the In content increases, when P-eff approaches Unity.

引用

页码：3038 / 3041

页数：4

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