Study of annealed Co thin films deposited by ion beam sputtering

被引:14
作者
Sharma, A [1 ]
Brajpuriya, R [1 ]
Tripathi, S [1 ]
Chaudhari, SM [1 ]
机构
[1] Univ Grant Commiss, Dept Atom Energy Consortium Sci Res, Indore 452017, India
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2006年 / 24卷 / 01期
关键词
D O I
10.1116/1.2135292
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper presents structural, magnetic and transport property measurements carried out on as deposited as well as annealed Co (400 angstrom) thin films. The magnetization measurements carried out using a magneto-optical Kerr effect (MOKE) technique show large increases in coercivity and saturation field values with annealing of the samples at higher temperatures. However, corresponding resistivity measurements show a gradual decrease in resistivity and drops to minimum at 500 degrees C. Observed magnetization and resistivity behavior is mainly attributed to (i) change in crystal structure from hcp to fee; (ii) increase in grain size; and (iii) stress relaxation due to the annealing treatment as revealed by x-ray diffraction measurements. (c) 2006 American Vacuum Society.
引用
收藏
页码:74 / 77
页数:4
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