Mg composition dependent strain analysis in nonpolar a-plane MgxZn1-xO films

被引：6
|
作者：
Saraf, G. [1 ]
Lu, Y. [1 ]
Siegrist, T. [2 ,3 ]
机构：
[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA
[2] Bell Labs, Murray Hill, NJ 07974 USA
[3] Columbia Univ, Dept Chem, New York, NY 10027 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 15期
关键词：
D O I：
10.1063/1.3000636
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nonpolar a-plane (1120) MgxZn1-xO (a-MgxZn1-xO) films are deposited on (0112) r-sapphire substrates using metalorganic chemical vapor deposition with varying Mg composition (x from 0 to 0.25). Unit cell parameters with Mg composition are determined by high-resolution triple-axis x-ray diffraction. In-plane strain along the c-axis [0001] and m-axis [1100] in the films is anisotropic and increases with increasing Mg composition. The in-plane strain anisotropy changes with Mg composition in a-MgxZn1-xO. Calculations are carried out to determine the influence of Mg content on the residual interfacial strain. (c) 2008 American Institute of Physics.
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页数：3
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