Mg composition dependent strain analysis in nonpolar a-plane MgxZn1-xO films

被引：6

作者：

Saraf, G. ^{[1
]}

Lu, Y. ^{[1
]}

Siegrist, T. ^{[2
,3
]}

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[2] Bell Labs, Murray Hill, NJ 07974 USA

[3] Columbia Univ, Dept Chem, New York, NY 10027 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 15期

关键词：

D O I：

10.1063/1.3000636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar a-plane (1120) MgxZn1-xO (a-MgxZn1-xO) films are deposited on (0112) r-sapphire substrates using metalorganic chemical vapor deposition with varying Mg composition (x from 0 to 0.25). Unit cell parameters with Mg composition are determined by high-resolution triple-axis x-ray diffraction. In-plane strain along the c-axis [0001] and m-axis [1100] in the films is anisotropic and increases with increasing Mg composition. The in-plane strain anisotropy changes with Mg composition in a-MgxZn1-xO. Calculations are carried out to determine the influence of Mg content on the residual interfacial strain. (c) 2008 American Institute of Physics.

引用

页数：3

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