Defects in p-type Cz-silicon irradiated at elevated temperatures

被引：11
|
作者：
Ganagona, Naveengoud [1 ]
Raeissi, Bahman [1 ]
Vines, Lasse [1 ]
Monakhov, Edouard V. [1 ]
Svensson, Bengt G. [1 ]
机构：
[1] Univ Oslo, Dept Phys, Ctr Mat Sci & Nanotechnol, N-0316 Oslo, Norway
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11 | 2012年 / 9卷 / 10-11期
关键词：
silicon; DLTS; interstitial carbon; oxygen dimer; ELECTRON-IRRADIATION; OXYGEN; LIFETIME;
D O I：
10.1002/pssc.201200217
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
P-type Czochralski grown (Cz) silicon samples have been irradiated at room temperature (RT), 350, and 450 degrees C with 1.8 MeV protons to doses of 2x10(12) and 1x10(13) cm(-2) and analyzed by deep level transient spectroscopy (DLTS). The generation rate of interstitial carbon-interstitial oxygen (CiOi) increases with the irradiation temperature, suggesting less efficient annihilation of self-interstitials and mono-vacancies at elevated temperature. A defect located at similar to E-v+0.39 eV (E-v denotes the valence band edge) appears in the sample irradiated at 450 degrees C and also emerges at the expense of CiOi center in the sample irradiated at RT and subsequently heat-treated above 400 degrees C. The amplitude of this level is enhanced in the sample irradiated at 450 degrees C. By comparing the annealing behavior found by photoluminescence (PL) measurements and reported theoretical predictions, the similar to E-v+0.39 eV level is tentatively assigned to the interstitial carbon-oxygen dimer (CiO2i). In addition, other levels at similar to E-v+0.34 eV and similar to E-v+0.58 eV are observed in samples irradiated at 450 degrees C and RT with heat treatment in the range of 400-500 degrees C. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
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页码：2009 / 2012
页数：4
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