Enhancement of the Schottky barrier height of Au/ZnO nanocrystal by zinc vacancies using a hydrothermal seed layer

Various seed layers were prepared on a Si substrate using the sol-gel (SG) or hydrothermal (HT) method and then ZnO nanocrystal was grown on the seed layer by an HT process. Au/ZnO nanocrystal Schottky diodes (SDs) were fabricated to study the effects of various seed layers on the electrical properties of Au/ZnO SDs. The observations showed that large numbers of Zn vacancies were present near the interface of Au/ZnO with an HT seed layer. The Zn vacancy plays an acceptor-like role, which raises the barrier height of the Au/ZnO SDs to 0.79 eV with a rectifying ratio of more than 8000. Hence, a non-surface-treated Au/ZnO SD was achieved as compared to those of other reported oxygen-plasma treated surfaces. In contrast, oxygen vacancies appear near the interface of Au/ZnO with an SG seed layer. The O vacancy plays a donor-like role, which reduces the barrier height of Au/ZnO, leading to an Ohmic behavior in the I-V characteristics. Zn out-diffusion is found during Au evaporation by of x-ray photoelectron spectroscopy measurements.