Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-ray Three-Dimensional Topography

被引：1

作者：

Tanuma, Ryohei ^{[1
]}

Mori, Daisuke ^{[2
]}

Kamata, Isaho ^{[1
]}

Tsuchida, Hidekazu ^{[1
]}

机构：

[1] CRIEPI, 2-6-1 Nagasaka, Yokosuka, Kanagawa 2400196, Japan

[2] Fuji Elect Co Ltd, Tokyo 1918502, Japan

来源：

DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV | 2012年 / 725卷

基金：

日本学术振兴会;

关键词：

X-ray; Microbeam; Topography; Three dimensional; Dislocation; Basal plane dislocation; Threading edge dislocation; Strain; Simulation; MICROBEAM;

D O I：

10.4028/www.scientific.net/MSF.725.3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper demonstrates the X-ray three-dimensional topography of basal-plane dislocations (BPDs) and threading edge dislocations (TEDs) in 4H-SiC. Cross-sectional imaging shows the propagation of BPDs from a substrate to an epilayer and the conversion of BPDs into TEDs near the epilayer/substrate interface. The strain analysis of TEDs exhibits the image of strains on the order of +/- 10(-5). The observed strain images correlate well to simulation results.

引用

页码：3 / +

页数：2

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