Vertical "III-V" V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering

被引:41
作者
Conesa-Boj, Sonia [1 ]
Russo-Averchi, Eleonora [1 ]
Dalmau-Mallorqui, Anna [1 ]
Trevino, Jacob [2 ,3 ]
Pecora, Emanuele F. [2 ,3 ]
Forestiere, Carlo [2 ,3 ,4 ]
Handin, Alex [2 ,3 ]
Ek, Martin [5 ]
Zweifel, Ludovit [1 ]
Wallenberg, L. Reine [5 ]
Rueffer, Daniel [1 ]
Heiss, Martin [1 ]
Troadec, David [5 ]
Dal Negro, Luca [2 ,3 ]
Caroff, Philippe [6 ]
Fontcuberta i Morral, Anna [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Lab Mat Semicond, CH-1015 Lausanne, Switzerland
[2] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
[3] Boston Univ, Photon Ctr, Boston, MA 02215 USA
[4] Univ Naples Federico II, Dept Elect Engn, I-80125 Naples, Italy
[5] Lund Univ, nCHREM Polymer & Mat Chem, S-22100 Lund, Sweden
[6] CNRS, UMR 8520, Inst Elect Microelect & Nanotechnol, F-59652 Villeneuve Dascq, France
基金
美国国家科学基金会;
关键词
III-V nanostructures; nanomembranes; V-shape; nucleation; light scattering; INAS NANOWIRE GROWTH; SEMICONDUCTOR NANOWIRES; GAAS NANOWIRES; SILICON; OXIDE; SUPPRESSION; FORMULATION; NANOFLOWERS; NETWORKS; PHYSICS;
D O I
10.1021/nn304526k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report on a new form of III-IV compound semiconductor nanostructures growing epitaxially as vertical V-shaped nanomembranes on Si(001) and study their light-scattering properties. Precise position control of the InAs nanostructures in regular arrays is demonstrated by bottom-up synthesis using molecular beam epitaxy in nanoscale apertures on a SiO2 mask. The InAs V-shaped nanomembranes are found to originate from the two opposite facets of a rectangular pyramidal island nucleus and extend along two opposite < 111 > B directions, forming flat {110} walls. Dark-field scattering experiments, in combination with light-scattering theory, show the presence of distinctive shape-dependent optical resonances significantly enhancing the local intensity of incident electromagnetic fields over tunable spectral regions. These new nanostructures could have interesting potential in nanosensors, infrared light emitters, and nonlinear optical elements.
引用
收藏
页码:10982 / 10991
页数:10
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