Laser-assisted CMP for copper wafer

被引：0

作者：

Ha, TH

Kimura, K

Miyoshi, T

Takaya, Y

机构：

[1] Osaka Univ, Dept Mech & Syst Engn, Suita, Osaka 5650871, Japan

[2] Kyushu Inst Technol, Dept Mech Engn, Iizuka, Fukuoka 8208502, Japan

来源：

NEW FRONTIERS OF PROCESSING AND ENGINEERING IN ADVANCED MATERIALS | 2005年 / 502卷

关键词：

CMP; planarization; copper; wafer; laser;

D O I：

10.4028/www.scientific.net/MSF.502.351

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents a laser-assisted Cu-CMP (Chemical Mechanical Polishing) method for obtaining higher planarized surface by forming laser aggregation particles on recessed areas of uneven copper surface before polishing. At first, the laser trapping of fine particles in slurry and the formation of aggregated marks on the copper wafer surface were investigated by fundamental experiments based on optical radiation pressure. Next, proposed planarization method for uneven surface of copper wafer was attempted. As the polishing processed, the height of aggregated marks was reduced. Then, it was confirmed that the aggregated marks played a role of masks, and no material removal at the bottom surface of recessed areas took place during polishing. This process made it possible to realize high planarity on copper wafer surface.

引用

页码：351 / 356

页数：6