Bifacial Shingle Solar Cells on p-Type Cz-Si (pSPEER)

被引：5

作者：

Baliozian, Puzant ^{[1
]}

Lohmueller, Elmar ^{[1
]}

Fellmeth, Tobias ^{[1
]}

Woehrle, Nico ^{[1
]}

Krieg, Alexander ^{[1
]}

Preu, Ralf ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, Heidenhofstr 2, D-79110 Freiburg, Germany

来源：

SILICONPV 2018: THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS | 2018年 / 1999卷

关键词：

D O I：

10.1063/1.5049311

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The concepts of bifaciality and shingling interconnection allow for a boost in output power density p(out) for silicon-based photovoltaic modules. This work examines silicon-based, bifacial shingle solar cells called "p-type shingled passivated edge, emitter, and rear (pSPEER)". A specially designed shingle metallization layout on industrial 6-inch p-type Czochralski-grown silicon precursors is contact fired to obtain the host wafer. Six pSPEER cells each of an area of 23 mm x 148 mm are obtained by a newly integrated thermal laser separation step, leaving a very smooth edge for the singulated pSPEER cells. The peak front side output power density is p(out, f) = 20.8 mW/ cm(2) (equivalent to a peak energy conversion efficiency eta = 20.8% under standard test conditions). A total output power density p(out) = 21.9 mW/ cm(2) is attained by assuming an additional rear irradiance of 100 W/m(2).

引用

页数：6

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