Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films

被引：81

作者：

Islamov, Damir R. ^{[1
,2
]}

Gritsenko, Vladimir A. ^{[1
,2
,3
]}

Perevalov, Timofey V. ^{[1
,2
]}

Pustovarov, Vladimir A. ^{[4
]}

Orlov, Oleg M. ^{[5
]}

Chernikova, Anna G. ^{[6
]}

Markeev, Andrey M. ^{[6
]}

Slesazeck, Stefan ^{[7
]}

Schroeder, Uwe ^{[7
]}

Mikolajick, Thomas ^{[7
,8
]}

Krasnikov, Gennadiy Ya ^{[5
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, 13 Lavrentiev Ave, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, 2 Pirogov St, Novosibirsk 630090, Russia

[3] Novosibirsk State Tech Univ, 20 Karl Marx Ave, Novosibirsk 630073, Russia

[4] Ural Fed Univ, Expt Phys Dept, 19 Mira St, Ekaterinburg 620002, Russia

[5] Mol Elect Res Inst, 12-1 1 St Zapadniy Proezd, Moscow 124460, Russia

[6] State Univ, Moscow Inst Phys & Technol, 9 Inst Pereulok, Dolgoprudnyi 141700, Moscow Region, Russia

[7] NaMLab gGmbH, 64 Noethnitzer Str, D-01187 Dresden, Germany

[8] Tech Univ Dresden, Inst Semicond & Microsyst, 10 Helmholtzstr, D-01062 Dresden, Germany

来源：

ACTA MATERIALIA | 2019年 / 166卷

基金：

俄罗斯科学基金会;

关键词：

Ferroelectric Hf0.5Zr0.5O2; Defects; Luminescence; Oxygen vacancies; Leakage currents; CHARGE-TRANSPORT; POLARIZATION REVERSAL; MECHANISM; HAFNIUM;

D O I：

10.1016/j.actamat.2018.12.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The discovery of ferroelectricity in hafnium oxide has revived the interest in ferroelectric memories as a viable option for low power non-volatile memories. However, due to the high coercive field of ferroelectric hafnium oxide, instabilities in the field cycling process are commonly observed and explained by the defect movement, defect generation and field induced phase transitions. In this work, the optical and transport experiments are combined with ab-initio simulations and transport modeling to validate that the defects which act as charge traps in ferroelectric active layers are oxygen vacancies. A new oxygen vacancy generation leads to a fast growth of leakage currents and a consequent degradation of the ferroelectric response in Hf0.5Zr0.5O2 films. Two possible pathways of the Hf0.5Zr0.5O2 ferroelectric property degradation are discussed. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：47 / 55

页数：9

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