Structural analysis of Si(111)-√21 x √21-(Ag, Cs) surface by reflection high-energy positron diffraction

被引:5
作者
Fukaya, Y. [1 ]
Matsuda, I. [2 ]
Yukawa, R. [2 ]
Kawasuso, A. [1 ]
机构
[1] Japan Atom Energy Agcy, Adv Sci Res Ctr, Takasaki, Gunma 3701292, Japan
[2] Univ Tokyo, ISSP, Kashiwa, Chiba 2778581, Japan
关键词
Surface structure; Silicon; Silver; Cesium; Reflection high-energy positron diffraction (RHEPD); SCANNING-TUNNELING-MICROSCOPY; HUME-ROTHERY PHASES; ELECTRONIC-STRUCTURE; SI(111)-ROOT-3X-ROOT-3-AG SURFACE; BEAM; CRYSTALS;
D O I
10.1016/j.susc.2012.07.039
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have investigated the Si(111)-root 21 x root 21-(Ag, Cs) superstructure using reflection high-energy positron diffraction. Rocking curve analysis based on the dynamical diffraction theory reveals that Cs atoms are located at a height of 3.04 angstrom above the underlying root 3 x root 3-Ag structure and that they form a triangular structure with a side length of 10.12 angstrom. The structure of the Si( 111)-root 21 x root 21-(Ag, Cs) surface is significantly different from those of the Si(111)-root 21 x root 21-Ag and Si(111)-root 21 x root 21-(Ag, Au) surfaces, probably because of the different electronic structures of the alkali and noble metal atoms. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:1918 / 1921
页数:4
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