Thermoelectric properties of Nb-doped SrO(SrTiO3)1 epitaxial films

被引：0
作者：
Lee, K. H. [1 ]
Ishizaki, A. [2 ]
Ohta, H. [1 ,2 ]
Koumoto, K. [1 ,2 ]
机构：
[1] Japan Sci & Technol Agcy, CREST, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan
[2] Nagoya Univ, Grad Sch Engn Nagoya, Nagoya, Aichi 4648603, Japan
来源：
PROCEEDINGS ICT 07: TWENTY-SIXTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 2008年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thermoelectric properties of the heavily Nb-doped SrO(SrTiO3)(1) were investigated over a wide temperature range (20 - 800 K) by the preparation of c-axis-oriented epitaxial films. The films were grown heteroepitaxially on the (001)-face of the LaAlO3 substrate with an epitaxial relationship of (001) [100] Nb-doped SrO(SrTiO3)(1) parallel to (001) [100] LaAlO3. The thermoelectric properties of the Nb-doped SrO(SrTiO3)(1) epitaxial films were enhanced compared with those of the polycrystalline ceramics, and the electronic transport occurred predominantly in the SrTiO3 layers.
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页码：137 / 140
页数：4
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