Chemical vapor deposition of copper films from copper dipivaloylmethanate in hydrogen atmosphere

被引：6

作者：

Bakovets, VV ^{[1
]}

Levashova, TM ^{[1
]}

Dolgovesova, IP ^{[1
]}

Danilovich, VS ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Div, Inst Inorgan Chem, Novosibirsk 630090, Russia

来源：

INORGANIC MATERIALS | 2002年 / 38卷 / 05期

关键词：

Copper; Activation Energy; Vapor Pressure; Electrical Resistivity; Chemical Vapor Deposition;

D O I：

10.1023/A:1015462820076

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Data are presented on the kinetics and mechanism of copper deposition from Cu(dpm)(2) vapor in a hydrogen atmosphere at normal pressure. From kinetic analysis of the deposition rate as a function of substrate temperature (200-390degreesC) and Cu(dpm)(2) vapor pressure (less than or equal to7.8 Pa), the main parameters of kinetically limited deposition were determined: activation energy of 27 +/- 7 kJ/mol, preexponential factor of (2.9 +/- 1.8) x 10(2) cm/s, and reaction order of unity. Under diffusion-control conditions, the diffusion rate constant is 4.8 cm/s, and the thickness of the diffusion layer is 8 x 10(-2) cm. The films grow by a mixed (island-layer) mechanism, and their electrical resistivity is close to that of bulk copper.

引用

页码：457 / 463

页数：7