Carbon arc plasma: characterization and synthesis of nanosized SiC

Silicon carbide SiC is an important ceramic material with many applications. The nanomaterials can posess novel electronic and mechanical properties. Thus, we attempted to produce SiC nanopowder via a fast, one-step direct plasma synthesis. Two experimental systems were tested regarding the efficiency of SiC formation (for comparison): (i) arc plasma and (ii) high-temperature aerosol route. The products were characterized by wet chemical analysis, X-ray diffraction (XRD) and scanning electron microscopy (SEM). Almost total plasma conversion of starting Si-bearing reactants (Si, SiO and SiO2) was achieved with SiC nanopowder (well below 100 nm) as a main product. From the emission spectroscopy measurements the arc plasma temperatures were evaluated to be within 3500-6000 K.