Junction Field-Effect Transistor Based on GaAs Core-Shell Nanowires

被引：0

作者：

Benner, O. ^{[1
]}

Lysov, A. ^{[1
]}

Gutsche, C. ^{[1
]}

Keller, G. ^{[1
]}

Schmidt, C. ^{[1
]}

Prost, W. ^{[1
]}

Tegude, F. J. ^{[1
]}

机构：

[1] Univ Duisburg Essen, Dept Solid State Elect, Duisburg, Germany

来源：

2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年

关键词：

nanowire; JFET; GaAs;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanowire FETs with all-around Junction-Gate are demonstrated using GaAs core-shell nanowires. The electrical properties of the n-channel Junction FET were determined by DC measurements. The radial pn-junctions show diode-type I-V characteristics. The output and transfer I-V characteristics exhibit good pinch-off, and hysteresis-free transient behavior. First devices with 190 nm nanowire channel diameter show a drain current of I-D = 260 nA and a transconductance of g(m) = 300 nS.

引用

页数：2

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