Quantum Capacitance in Armchair Graphene Nanoribbon Considering Edge Effect for Different Channel Width

被引：0
作者：
Hassan, Asif [1 ]
Labib [2 ]
Abedin, Minhaz Ibna [3 ]
机构：
[1] Khulna Univ Engn & Technol, Khulna, Bangladesh
[2] Leading Univ, Sylhet, Bangladesh
[3] Chittagong Univ Engn & Technol, Pahartali, Bangladesh
来源：
2014 9TH INTERNATIONAL FORUM ON STRATEGIC TECHNOLOGY (IFOST) | 2014年
关键词：
Graphene nanoribbon; bandgap; classical capacitance; quantum capacitance; TRANSISTORS;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Armchair Graphene nanoribbons (A-GNRs) are important tonic in nanoscale transistor dominated laboratory because of its semiconducting properties. Edge disorder in C-C bond or effect in A-GNR has an important effect on electronic properties like bandgap, capacitance. In previous literature these properties are investigated without considering any edge effect of A-GNRs. In this paper we will observe the band gap energy, quantum capacitance considering edge effect for different width of A-GNRs. We will then observe a comparison of quantum capacitance with considering edge effect and simple band gap energy formula.
引用
收藏
页码：456 / 459
页数：4
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