Growth Kinetics of Copper Replacement Deposition on Al and Al-Si from a Deep Eutectic Solvent

被引：9
作者：
Kang, Ruixue [1 ,2 ]
Liang, Jun [1 ]
Qiao, Zhuhui [1 ]
Peng, Zhenjun [1 ]
机构：
[1] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100080, Peoples R China
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2015年 / 162卷 / 10期
基金：
中国国家自然科学基金;
关键词：
ATOMIC-FORCE MICROSCOPY; IONIC LIQUID; ZINCATE PROCESS; GALVANIC DISPLACEMENT; MAGNESIUM ALLOY; ALUMINUM; PRETREATMENT; ELECTRODEPOSITION; PHASE; FILMS;
D O I：
10.1149/2.0251510jes
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The galvanic replacement deposition of copper (Cu) layers from a choline chloride-ethylene glycol deep eutectic solvent was carried out on pure Al (99.99%) and Al-5Si alloy (Al-5 wt% Si alloy). The growth kinetics of Cu galvanic replacement were investigated by open circuit potential (OCP) and electrochemical noise (ECN). The microstructure characteristics of Cu layers were studied by scanning electron microscopy (SEM) and energy dispersive X-ray (EDS) analysis. Results showed that the driving force of Cu galvanic replacement deposition on Al-5Si alloy was weaker than that on pure Al substrate, resulting in the lower galvanic replacement rate of Cu on Al-5Si alloy. The Cu layer on Al-5Si alloy was dense and uniform, while was loose and discontinuous on pure Al. The Si as solid solute in Al matrix of Al-5Si alloy was the main reason for obtaining dense and uniform Cu layer on the substrate. (c) 2015 The Electrochemical Society. All rights reserved.
引用
收藏
页码：D515 / D519
页数：5
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