Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C

被引：20

作者：

Thomas, S. M. ^{[1
]}

Sharma, Y. K. ^{[1
]}

Crouch, M. A. ^{[1
]}

Fisher, C. A. ^{[1
]}

Perez-Tomas, A. ^{[2
]}

Jennings, M. R. ^{[1
]}

Mawby, P. A. ^{[1
]}

机构：

[1] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

[2] Inst Catala Nanociencia & Nanotecnol ICN2, Bellaterra 08193, Spain

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2014年 / 2卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

4H-SiC; high temperature; mobility; MOSFET; oxidation;

D O I：

10.1109/JEDS.2014.2330737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel 1500 degrees C gate oxidation process has been demonstrated on Si face of 4H-SiC. Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this process have a maximum field effect mobility of approximately 40 cm(2)V(-1)s(-1) without post oxidation passivation. This is substantially higher than other reports of MOSFETs with thermally grown oxides (typically grown at the standard silicon temperature range of 1100-1200 degrees C). This result shows the potential of a high temperature oxidation step for reducing the channel resistance (thus the overall conduction loss), in power 4H-SiC MOSFETs.

引用

页码：114 / 117

页数：4

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