Thin Film Wafer Level Encapsulated RF-MEMS Switch for D-Band Applications

被引:0
|
作者
Wipf, S. Tolunay [1 ]
Goeritz, A. [1 ]
Wietstruck, M. [1 ]
Wipf, C. [1 ]
Tillack, B. [1 ,2 ]
Mai, A. [1 ]
Kaynak, M. [1 ,3 ]
机构
[1] IHP, Technolpk 25, D-15236 Frankfurt, Oder, Germany
[2] Tech Univ Berlin, HFT4, Einsteinufer 25, D-10587 Berlin, Germany
[3] Sabanci Univ, D-34956 Istanbul, Turkey
关键词
BiCMOS; mm-wave; wide band; RF-MEMS; SPST; encapsulation; monolithic integration; packaging;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a wafer level packaged (WLP) RF-MEMS switch fabricated in a 0.13 mu m SiGe BiCMOS process technology for D-Band (110-170 GHz) applications. For the wafer level packaging, thin film encapsulation approach is developed and used during the Back-End-of-Line (BEOL) fabrication process. The fabricated wafer level encapsulated (WLE) RFMEMS switch provides a high capacitance Con/Coff ratio of 11.1. The fabricated WLE RF-MEMS switch shows beyond state of the art RF performances of better than 0.67 dB insertion loss and more than 16 dB isolation in all D-band. The measured maximum isolation of the WLE switch is 51.6 dB at 142.8 GHz with an insertion loss of 0.65 dB.
引用
收藏
页码:452 / 455
页数:4
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