Precise Determination of the Direct-Indirect Band Gap Energy Crossover Composition in AlxGa1-xAs

被引：8

作者：

Beaton, Daniel A. ^{[1
]}

Alberi, Kirstin ^{[1
]}

Fluegel, Brian ^{[1
]}

Mascarenhas, Angelo ^{[1
]}

Reno, John L. ^{[2
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Sandia Natl Labs, Ctr Integrated Nanotechnol, Albuquerque, NM 87123 USA

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 07期

关键词：

ALLOYS; PHOTOLUMINESCENCE; DEPENDENCE; PARAMETERS;

D O I：

10.7567/APEX.6.071201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MBE grown AlxGa1-xAs samples, with x in the range 0.282-0.424, were studied by using time-integrated and time-resolved photoluminescence spectroscopy, photo-modulation reflectance spectroscopy and photoluminescence excitation spectroscopy. The direct and indirect band gap transitions are observed simultaneously in two AlxGa1-xAs samples with x = 0.387 and 0.396. An exact determination of the direct-indirect crossover composition at low temperatures is found at a direct band gap energy of 2.059 eV, which corresponds to a aluminum content of [Al] = 38.4 +/- 0.3%. (c) 2013 The Japan Society of Applied Physics

引用

收藏

页数：4

相关论文

共 10 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] Direct-indirect crossover in GaxIn1-xP alloys [J].

Alberi, K. ;

Fluegel, B. ;

Steiner, M. A. ;

France, R. ;

Olavarria, W. ;

Mascarenhas, A. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (11)

[3] INDIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XAS ALLOYS [J].

GUZZI, M ;

GRILLI, E ;

OGGIONI, S ;

STAEHLI, JL ;

BOSIO, C ;

PAVESI, L .

PHYSICAL REVIEW B, 1992, 45 (19) :10951-10957

[4] DEPENDENCE OF THE ALXGA1-XAS BAND EDGE ON ALLOY COMPOSITION BASED ON THE ABSOLUTE MEASUREMENT OF X [J].

KUECH, TF ;

WOLFORD, DJ ;

POTEMSKI, R ;

BRADLEY, JA ;

KELLEHER, KH ;

YAN, D ;

FARRELL, JP ;

LESSER, PMS ;

POLLAK, FH .

APPLIED PHYSICS LETTERS, 1987, 51 (07) :505-507

[5] SOME OPTICAL-PROPERTIES OF ALXGA1-XAS ALLOY SYSTEM [J].

MONEMAR, B ;

SHIH, KK ;

PETTIT, GD .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2604-2613

[6] PHOTOLUMINESCENCE OF ALXGA1-XAS NEAR THE GAMMA-X CROSSOVER [J].

OELGART, G ;

SCHWABE, R ;

HEIDER, M ;

JACOBS, B .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (07) :468-474

[7] PHOTOLUMINESCENCE OF ALXGA1-XAS ALLOYS [J].

PAVESI, L ;

GUZZI, M .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) :4779-4842

[8] Growth and optical characterization of indirect-gap AlxGa1-xAs alloys [J].

Purón, E ;

Martínez-Criado, G ;

Riech, I ;

Almeida-García, J ;

Cantarero, A .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :418-424

[9] Band parameters for III-V compound semiconductors and their alloys [J].

Vurgaftman, I ;

Meyer, JR ;

Ram-Mohan, LR .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :5815-5875

[10] Composition of AlGaAs [J].

Wasilewski, ZR ;

Dion, MM ;

Lockwood, DJ ;

Poole, P ;

Streater, RW ;

SpringThorpe, AJ .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (04) :1683-1694