Low Loss Germanium-on-Silicon waveguides for integrated Mid-infrared Photonics

被引：2

作者：

Millar, R. W. ^{[1
]}

Gallacher, K. ^{[1
]}

Griskeviciute, U. ^{[1
]}

Baldassarre, L. ^{[2
]}

Sorel, M. ^{[1
]}

Ortolani, M. ^{[2
]}

Paul, D. J. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Roma La Sapienza, Dipartimento Fis, Piazzale Aldo Moro 5, I-00185 Rome, Italy

来源：

SILICON PHOTONICS XIV | 2019年 / 10923卷

基金：

英国工程与自然科学研究理事会;

关键词：

mid-infrared; germanium; waveguide;

D O I：

10.1117/12.2510009

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Low loss Ge-on-Si waveguides are demonstrated in the 8 - 14 mu m atmospheric transmission window, a technology that will enable detection and sensing of unique molecular vibrations. Such a low cost platform would have applications in key markets such as pollution monitoring, explosives detection and point of care diagnostics. Rib-waveguides are fabricated using electron beam lithography and dry etching. The waveguides propagation losses are characterized using the Fabry-Perot technique, and are found to be below 5 dB/cm across the measurement range of 7.5 to 11 mu m wavelength, reaching as low as similar to 1 dB/cm. The contribution to the losses are analyzed using the experimentally measured Si substrate losses, and the calculated scattering losses from an analytical model. The results verify the feasibility of the Ge-on-Si platform for integrated mid-infrared photonics and sensing.

引用

页数：8

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