Numerical simulation of implanted top-gate GH-SiC JFET characteristics

被引：3

作者：

Lades, M

Berz, D

Schmid, U

Sheppard, ST

Kaminski, N

Wondrak, W

Wachutka, G

机构：

[1] Munich Univ Technol, Inst Phys Electrotechnol, D-80290 Munich, Germany

[2] Daimler Benz AG, Res & Technol, D-60528 Frankfurt, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

SiC; JFET; simulation; high-temperature; reverse modeling;

D O I：

10.1016/S0921-5107(98)00545-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A detailed numerical analysis of implanted top-gate 6H-SiC JFET structures was performed revealing the influence of a non-uniform channel doping profile. Based on structural parameters extracted from simulations of the device characteristics at various bias conditions and temperatures, we obtain channel mobility parameters close to Hall data for bulk epitaxial layers. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：415 / 418

页数：4

共 8 条

[1]

Bakowski M, 1997, PHYS STATUS SOLIDI A, V162, P421, DOI 10.1002/1521-396X(199707)162:1<421::AID-PSSA421>3.0.CO

[2]

2-B

[3]

*ISE, DESS US MAN

[4] Modeling the electrical characteristics of n-channel 6H-SiC junction-field-effect transistors as a function of temperature [J].

McLean, FB ;

Tipton, CW ;

McGarrity, JM ;

Scozzie, CJ .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) :545-552

[5] SIC DEVICES - PHYSICS AND NUMERICAL-SIMULATION [J].

RUFF, M ;

MITLEHNER, H ;

HELBIG, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) :1040-1054

[6]

SCHAFFER WJ, 1994, MATER RES SOC SYMP P, V339, P595, DOI 10.1557/PROC-339-595

[7]

SHEPPARD ST, 1997, P IC SCIII N T TECH

[8]

VANHALEN P, 1991, PROCEEDINGS OF THE 33RD MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1 AND 2, P715, DOI 10.1109/MWSCAS.1990.140819

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