A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

被引：14

作者：

Chang, Jingjing ^{[1
]}

Shao, Jinjun ^{[1
]}

Zhang, Jie ^{[2
]}

Wu, Jishan ^{[1
,2
]}

Chi, Chunyan ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

RSC ADVANCES | 2013年 / 3卷 / 19期

关键词：

ORGANIC TRANSISTORS; MATERIALS DESIGN; SEMICONDUCTORS; DERIVATIVES; TETRACENE; POLYMER;

D O I：

10.1039/c3ra40504d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (-4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm(2) V-1 s(-1) and a high on-off current ratio of 10(5)-10(6). The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS-pentacene demonstrated a maximum voltage gain (-dV(OUT)/dV(IN)) of 64.

引用

页码：6775 / 6778

页数：4

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