Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors

被引：57

作者：

Chowdhury, Md Delwar Hossain ^{[1
,2
]}

Migliorato, Piero ^{[1
,2
,3
]}

Jang, Jin ^{[1
,2
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

[2] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

[3] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 14期

关键词：

D O I：

10.1063/1.4801762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the temperature dependence of negative bias under illumination stress and recovery. The transfer characteristics exhibits a non-rigid shift towards negative gate voltages. For both stress and recovery, the voltage shift in deep depletion is twice that in accumulation. The results support the mechanism we previously proposed, which is creation and annealing of a double donor, likely to be an oxygen vacancy. The time dependence of stress and recovery can be fitted to stretched exponentials. Both processes are thermally activated with activation energies 1.06 eV and 1.25 eV for stress and recovery, respectively. A potential energy diagram is proposed to explain the results. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 23 条

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