Deep-level transient spectroscopy and cathodoluminescence of CdSe/ZnSe QD structures grown on GaAs(100) by MBE

被引:0
作者
Litvinov, VG
Kozlovsky, VI
Sadofyev, YG
机构
[1] Ryazan State Radioengn Acad, Ryazam 391000, Russia
[2] RAS, PN Lebedev Phys Inst, Moscow 117924, Russia
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2002年 / 229卷 / 01期
关键词
D O I
10.1002/1521-3951(200201)229:1<513::AID-PSSB513>3.0.CO;2-#
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
CdSe/ZnSe structures grown on n(+)-GaAs(100) by molecular beam epitaxy were studied by methods of deep-level transient spectroscopy (DLTS) and cathodoluminescence (CL). In DLTS measurements, an unusual dependence of the activation energy for electron emission from CdSe layer levels on filling conditions was observed. This dependence was explained on basis of the interaction between electron charge in CdSe quantum dots (QD) and charged deep levels placed in ZnSe barriers. The existence of barriers for the electron capture by QDs was found also.
引用
收藏
页码:513 / 517
页数:5
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