Studies of compositional dependent CZTS thin film solar cells by pulsed laser deposition technique: An attempt to improve the efficiency

被引：133

作者：

Moholkar, A. V. ^{[1
]}

Shinde, S. S. ^{[1
]}

Agawane, G. L. ^{[2
]}

Jo, S. H. ^{[2
]}

Rajpure, K. Y. ^{[1
]}

Patil, P. S. ^{[3
]}

Bhosale, C. H. ^{[1
]}

Kim, J. H. ^{[2
]}

机构：

[1] Shivaji Univ, Dept Phys, Electrochem Mat Lab, Kolhapur 416004, Maharashtra, India

[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea

[3] Shivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, Maharashtra, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2012年 / 544卷

关键词：

CZTS; X-ray diffraction; Electron microscopy; Solar cells; OPTICAL-PROPERTIES; SULFURIZATION; FABRICATION; PRECURSORS;

D O I：

10.1016/j.jallcom.2012.07.108

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The performance of CZTS thin films deposited by using pulsed laser deposition technique is investigated as a function of target composition. The chemical composition ratio a = Cu/(Zn + Sn) of the target material has been varied from 0.8 to 1.2 in step of 0.1 by keeping Zn/Sn constant. The effect of the chemical composition in the precursor thin films on the structural, morphological, chemical and optical properties of the CZTS thin films has been investigated. X-ray diffraction and X-ray photoelectron spectroscopy studies showed that the annealed CZTS thin films are of a single kesterite crystal structure without any other secondary phases. The direct band gap energy of the CZTS thin films is found to decrease from 1.72-1.53 eV with increase of 'a'. The estimated band-gap energy from the quantum efficiency measurements is about 1.54 eV. The solar cell fabricated with Glass/Mo/CZTS/CdS/ZnO:Al/Al structure grown using [a = Cu/(Zn + Sn) = 1.1] showed the best conversion efficiency of 4.13% with V-oc = 700 mV, J(sc) = 10.01 mA/cm(2) and FF = 0.59. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：145 / 151

页数：7

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