Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells

被引：51

作者：

Hestroffer, Karine ^{[1
]}

Wu, Feng ^{[2
]}

Li, Haoran ^{[1
]}

Lund, Cory ^{[1
]}

Keller, Stacia ^{[1
]}

Speck, James S. ^{[2
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 10期

关键词：

InGaN; molecular beam epitaxy; strain relaxation; quantum wells; MOLECULAR-BEAM EPITAXY; GAN; RELAXATION; INDIUM;

D O I：

10.1088/0268-1242/30/10/105015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully relaxed In0.1Ga0.9N layer was grown by plasma-assisted molecular beam epitaxy on c-plane GaN using a grading technique. The growth of the graded InGaN layer in the intermediate regime enabled a smooth surface without the accumulation of In droplets. Transmission electron microscopy images show that the relaxation occurs through the formation of a high density of threading dislocations (TDs). Despite the presence of these TDs, relaxed InGaN films were then successfully used as a pseudo-substrate for the growth of InGaN/GaN quantum wells which luminesced at room temperature.

引用

页数：6

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