Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers -: art. no. 232502

被引：185

作者：

Diao, Z ^{[1
]}

Apalkov, D ^{[1
]}

Pakala, M ^{[1
]}

Ding, YF ^{[1
]}

Panchula, A ^{[1
]}

Huai, YM ^{[1
]}

机构：

[1] Grandis Inc, Milpitas, CA 95035 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 23期

关键词：

D O I：

10.1063/1.2139849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present spin transfer switching results for MgO based magnetic tunneling junctions (MTJs) with large tunneling magnetoresistance (TMR) ratio of up to 150% and low intrinsic switching current density of 2-3x10(6) A/cm(2). The switching data are compared to those obtained on similar MTJ nanostructures with AlOx barrier. It is observed that the switching current density for MgO based MTJs is 3 to 4 times smaller than that for AlOx based MTJs, and that can be attributed to higher tunneling spin polarization (TSP) in MgO based MTJs. In addition, we report a qualitative study of TSP for a set of samples, ranging from 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the TSP (at finite bias) responsible for the current-driven magnetization switching is suppressed as compared to zero-bias tunneling spin polarization determined from TMR. (c) 2005 Americian Institute of Physics.

引用

页码：1 / 3

页数：3

共 25 条

[21] Spin polarized tunneling at finite bias [J].