High power high-efficiency 1150-nm quantum-well laser

被引：29

作者：

Erbert, G ^{[1
]}

Bugge, F ^{[1
]}

Fricke, J ^{[1
]}

Ressel, P ^{[1
]}

Staske, R ^{[1
]}

Sumpf, B ^{[1
]}

Wenzel, H ^{[1
]}

Weyers, M ^{[1
]}

Tränkle, G ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2005年 / 11卷 / 05期

关键词：

gallium arsenide; high-power lasers; semiconductor lasers; waveguides;

D O I：

10.1109/JSTQE.2005.853843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Edge emitting diode lasers with highly strained InGaAs quantum wells and GaAs waveguide layers emitting at 1150 nm were investigated focusing on the impact of the waveguide design on fie laser performance. Using a thick GaAs waveguide layer broad area devices with low vertical divergence of 20 degrees FWHM and reliable operation at a power level of 80-mW/mu m stripe width were demonstrated.

引用

页码：1217 / 1222

页数：6

共 50 条

[41] Experiment of high power density space laser transmission and conversion with high overall efficiency
He, T. (ocean@bit.edu.cn), 1600, Beijing Institute of Technology (22):
[42] Direct current and 1/f noise characteristics of InGaAsp/GaAs high power quantum well laser diodes
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
不详
Zhongguo Jiguang, 2008, 8 (1144-1148): : 1144 - 1148
[43] High power, continuous wave, quantum cascade ring laser
Bai, Y.
Tsao, S.
Bandyopadhyay, N.
Slivken, S.
Lu, Q. Y.
Caffey, D.
Pushkarsky, M.
Day, T.
Razeghi, M.
APPLIED PHYSICS LETTERS, 2011, 99 (26)
[44] HIGH-POWER OPERATION OF 630 NM-BAND TENSILE-STRAINED MULTI-QUANTUM-WELL ALGAINP LASER-DIODES WITH A MULTIQUANTUM BARRIER
SHONO, M
HONDA, S
IKEGAMI, T
BESSYO, Y
HIROYAMA, R
KASE, H
YODOSHI, K
YAMAGUCHI, T
NIINA, T
ELECTRONICS LETTERS, 1993, 29 (11) : 1010 - 1011
[45] LASER GAIN AND CURRENT-DENSITY IN A DISORDERED ALGAAS/GAAS QUANTUM-WELL
LI, EH
CHAN, KS
ELECTRONICS LETTERS, 1993, 29 (14) : 1233 - 1234
[46] TAILORING OF QUANTUM-WELL LASER-EMISSION WAVELENGTH BY ANTIREFLECTION FACET COATING
SACHER, J
ELSASSER, W
GOBEL, EO
JUNG, H
ELECTRONICS LETTERS, 1991, 27 (16) : 1463 - 1464
[47] Anomalous differential resistance change at the oscillation threshold in quantum-well laser diodes
Eliseev, PG
Adamiec, P
Bercha, A
Dybala, F
Bohdan, R
Trzeciakowski, WA
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (01) : 9 - 14
[48] Internal optical loss and internal quantum efficiency of a high-power GaAs laser operating in the CW mode
Veselov, D. A.
Bobretsova, Yu K.
Klimov, A. A.
Bakhvalov, K., V
Slipchenko, S. O.
Pikhtin, N. A.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (11)
[49] High-pressure studies of recombination mechanisms in 1.3-μm GaInNAs quantum-well lasers
Jin, SR
Sweeney, SJ
Tomic, S
Adams, AR
Riechert, H
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (05) : 1196 - 1201
[50] Research on high-efficiency tuning characteristics of modulated grating Y-branch laser
Huang, Yi
You, Yue
Zhang, Haosen
Deng, Chuanlu
Hu, Chengyong
Wang, Lisen
Zhang, Xiaobei
Wang, Tingyun
CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2024, 51 (02):

← 1 2 3 4 5 →