High power high-efficiency 1150-nm quantum-well laser

被引：29

作者：

Erbert, G ^{[1
]}

Bugge, F ^{[1
]}

Fricke, J ^{[1
]}

Ressel, P ^{[1
]}

Staske, R ^{[1
]}

Sumpf, B ^{[1
]}

Wenzel, H ^{[1
]}

Weyers, M ^{[1
]}

Tränkle, G ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2005年 / 11卷 / 05期

关键词：

gallium arsenide; high-power lasers; semiconductor lasers; waveguides;

D O I：

10.1109/JSTQE.2005.853843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Edge emitting diode lasers with highly strained InGaAs quantum wells and GaAs waveguide layers emitting at 1150 nm were investigated focusing on the impact of the waveguide design on fie laser performance. Using a thick GaAs waveguide layer broad area devices with low vertical divergence of 20 degrees FWHM and reliable operation at a power level of 80-mW/mu m stripe width were demonstrated.

引用

页码：1217 / 1222

页数：6

共 50 条

[1] Impact of Well Number on High-Efficiency Strain-Balanced Quantum-Well Solar Cells
Welser, Roger E.
Polly, Stephen J.
Bogner, Brandon M.
Hubbard, Seth M.
IEEE JOURNAL OF PHOTOVOLTAICS, 2023, 13 (01): : 61 - 69
[2] HIGH-EFFICIENCY (1.2MW/MA) TOP-SURFACE-EMITTING GAAS QUANTUM-WELL LASERS
LEE, YH
TELL, B
BROWNGOEBELER, K
JEWELL, JL
LEIBENGUTH, RE
ASOM, MT
LIVESCU, G
LUTHER, L
MATTERA, VD
ELECTRONICS LETTERS, 1990, 26 (16) : 1308 - 1310
[3] MBE-grown high-efficiency 808 nm laser diodes
Wang, XQ
Wang, J
Burnham, GT
OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 : 377 - 381
[4] HIGH-PERFORMANCE 634NM INGAP/INGAALP STRAINED QUANTUM-WELL LASERS
CHANGHASNAIN, CJ
BHAT, R
KOZA, MA
ELECTRONICS LETTERS, 1991, 27 (17) : 1553 - 1555
[5] HIGH-POWER, INDEX-GUIDED, ALGAAS MULTIPLE QUANTUM-WELL LASERS
HARM, AO
PHILIPS JOURNAL OF RESEARCH, 1990, 45 (3-4) : 177 - 187
[6] High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm
Erbert, G
Bugge, F
Knauer, A
Sebastian, J
Thies, A
Wenzel, H
Weyers, M
Tränkle, G
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) : 780 - 784
[7] (INAS)1/(GAAS)4 SUPERLATTICE STRAINED QUANTUM-WELL LASER AT 980 NM
CHAND, N
DUTTA, NK
CHU, SNG
LOPATA, J
ELECTRONICS LETTERS, 1991, 27 (22) : 2009 - 2011
[8] High-efficiency 808-nm InGaAlAs-AlGaAs double-quantum-well semiconductor lasers with asymmetric waveguide structures
Li, Lin
Liu, Guojun
Li, Zhanguo
Li, Mei
Li, Hui
Wang, Xiaohua
Wan, Chunming
IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (5-8) : 566 - 568
[9] Progress in high-power high-efficiency VCSEL arrays
Seurin, Jean-Francois
Xu, Guoyang
Khalfin, Viktor
Miglo, Aleksandr
Wynn, James D.
Pradhan, Prachi
Ghosh, Chuni L.
D'Asaro, L. Arthur
VERTICAL-CAVITY SURFACE-EMITTING LASERS XIII, 2009, 7229
[10] Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers
Gokhale, MR
Studenkov, PV
Wei, J
Forrest, SR
IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (02) : 131 - 133

← 1 2 3 4 5 →