0.25-μm gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy

被引：4

作者：

Yoon, SF ^{[1
]}

Gay, BP ^{[1
]}

Zheng, HQ ^{[1
]}

Ang, KS ^{[1
]}

Wang, H ^{[1
]}

Ng, GI ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 04期

关键词：

D O I：

10.1016/S0038-1101(98)00305-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In0.48Ga0.52P/In0.20Ca0.80As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. Device with a mushroom gate of 0.25 mu m gate length and 80 mu m gate width achieved a peak transconductance (G(m)) of 420 mS/mm and drain current density of nearly 500 mA/mm. A high cut-off frequency (f(T)) of 58 GHz and maximum oscillation frequency (f(max)) of 120 GHz were obtained. The results showed that the In0.48Ga0.52P/In0.20Ga0.80As/GaAs material system grown by SSMBE using the valved phosphorus cracker cell for the In0.48Ga0.52P Schottky and spacer layers is clearly a viable technology for high frequency p-HEMT device applications. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：785 / 789

页数：5

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